Performance Analysis Inp Based by Saravana Kumar (8 results)

Condition: New.

Paperback. Condition: Brand New. 108 pages. 8.66x5.91x0.25 inches. In Stock.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -In silicon CMOS technology, scaling inhibits the device performance to a wide extent due to increased power dissipation and short channel effects. Therefore the need for alternative material and technology has become predominant for future devices in the nanometer regime. As the device scaling continues to the sub 20 nm regime, III-V compound semiconductors based High Electron Mobility Transistors (HEMTs) have become promising candidates replacing Si-based devices for future VLSI applications. Also, these III-V compound HEMT have dominated the market with superior performance in terms of high reliability compared to other devices such as silicon nanowires and carbon nanotubes. III-V materials such as InGaAs, InAlAs, and InAs based HEMTs are favorable devices for THz range frequency applications. The choice of a proper channel material (InGaAs sub-channel / InAs composite channel) and optimization of channel thickness (TCH), Barrier thickness(TB) and a gate length (Lg) in HEMT structure create low crystal related lattice defects, improved mobility, high DC, and analog / RF performances. 108 pp. Englisch.

Condition: New. Print on Demand.

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: R. Saravana KumarDr. R. Saravana Kumar was born in Tamilnadu, India. He received the B.E degree in Electronics and Communication Engineering and M.E degree in Applied Electronics. He received the Ph.D degree in Information and Commun.

Condition: New. PRINT ON DEMAND.

Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -In silicon CMOS technology, scaling inhibits the device performance to a wide extent due to increased power dissipation and short channel effects. Therefore the need for alternative material and technology has become predominant for future devices in the nanometer regime. As the device scaling continues to the sub 20 nm regime, III-V compound semiconductors based High Electron Mobility Transistors (HEMTs) have become promising candidates replacing Si-based devices for future VLSI applications. Also, these III-V compound HEMT have dominated the market with superior performance in terms of high reliability compared to other devices such as silicon nanowires and carbon nanotubes. III-V materials such as InGaAs, InAlAs, and InAs based HEMTs are favorable devices for THz range frequency applications. The choice of a proper channel material (InGaAs sub-channel / InAs composite channel) and optimization of channel thickness (TCH), Barrier thickness(TB) and a gate length (Lg) in HEMT structure create low crystal related lattice defects, improved mobility, high DC, and analog / RF performances.Books on Demand GmbH, Überseering 33, 22297 Hamburg 108 pp. Englisch.

Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - In silicon CMOS technology, scaling inhibits the device performance to a wide extent due to increased power dissipation and short channel effects. Therefore the need for alternative material and technology has become predominant for future devices in the nanometer regime. As the device scaling continues to the sub 20 nm regime, III-V compound semiconductors based High Electron Mobility Transistors (HEMTs) have become promising candidates replacing Si-based devices for future VLSI applications. Also, these III-V compound HEMT have dominated the market with superior performance in terms of high reliability compared to other devices such as silicon nanowires and carbon nanotubes. III-V materials such as InGaAs, InAlAs, and InAs based HEMTs are favorable devices for THz range frequency applications. The choice of a proper channel material (InGaAs sub-channel / InAs composite channel) and optimization of channel thickness (TCH), Barrier thickness(TB) and a gate length (Lg) in HEMT structure create low crystal related lattice defects, improved mobility, high DC, and analog / RF performances.