Hardcover. Condition: Near Fine. No Jacket. Inside front and back cover there is some fading. The text and the outside cover is unaffected. Otherwise the book is new. This book is hardcover!
Hardcover. Condition: Fine. No Jacket. 1st Edition. Springer-Verlag pictorial hardcover sans jacket (as issued), 1989, clean/tight, No marks or signs of use and No "shelf wear"; (Fine). We will bubble wrap the book and ship it in a New BOX- Not a plastic bag like the zombie sellers.
Language: English
Published by McGraw Hill Higher Education, 1987
ISBN 10: 0070021074 ISBN 13: 9780070021075
Seller: Ammareal, Morangis, France
Hardcover. Condition: Bon. Ancien livre de bibliothèque avec équipements. Couverture différente. Edition 1987. Ammareal reverse jusqu'à 15% du prix net de cet article à des organisations caritatives. ENGLISH DESCRIPTION Book Condition: Used, Good. Former library book. Different cover. Edition 1987. Ammareal gives back up to 15% of this item's net price to charity organizations.
US$ 36.78
Quantity: 1 available
Add to basketCondition: Good. This is an ex-library book and may have the usual library/used-book markings inside.This book has soft covers. In good all round condition. Please note the Image in this listing is a stock photo and may not match the covers of the actual item,600grams, ISBN:9780070021532.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: GreatBookPrices, Columbia, MD, U.S.A.
Condition: New.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Rarewaves.com USA, London, LONDO, United Kingdom
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: GreatBookPrices, Columbia, MD, U.S.A.
Condition: As New. Unread book in perfect condition.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: California Books, Miami, FL, U.S.A.
Condition: New.
Language: English
Published by World Scientific Publishing Co Pte Ltd, Singapore, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Grand Eagle Retail, Bensenville, IL, U.S.A.
Paperback. Condition: new. Paperback. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Rarewaves USA, OSWEGO, IL, U.S.A.
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
First Edition
US$ 37.33
Quantity: 1 available
Add to basketHardcover. Condition: Very Good. No Jacket. First Edition. Ex library with the usual blemishes. A00000331.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
US$ 60.28
Quantity: Over 20 available
Add to basketCondition: New.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Ria Christie Collections, Uxbridge, United Kingdom
US$ 68.83
Quantity: Over 20 available
Add to basketCondition: New. In.
US$ 70.23
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Add to basketCondition: New. In.
Published by Library stamps/marks on first free endpapers and titelpage. Text clean. World Scientific.
Seller: Antiquariaat Ovidius, Bredevoort, Netherlands
Condition: Gebraucht / Used. 1986. Hardcover. xv,222pp.
Language: English
Published by World Scientific Publishing Company, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
US$ 66.64
Quantity: Over 20 available
Add to basketCondition: As New. Unread book in perfect condition.
US$ 66.03
Quantity: 10 available
Add to basketPF. Condition: New.
Language: English
Published by World Scientific Publishing Company 1/1/1987, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: BargainBookStores, Grand Rapids, MI, U.S.A.
Paperback or Softback. Condition: New. Introd to Semiconductor Device Modelling. Book.
Condition: New. pp. 300.
US$ 69.13
Quantity: 1 available
Add to basketGood. UK stocked, available immediately. Hardcover, published by Springer in 1989. First edition. Very minor rubbing to the printed board covers, the front endpaper has been clipped. The text is unmarked throughout, a nice copy. Illustrated. Weight (unpacked) is 678 grams.
Language: English
Published by World Scientific Pub Co Inc, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Revaluation Books, Exeter, United Kingdom
US$ 86.78
Quantity: 2 available
Add to basketPaperback. Condition: Brand New. 238 pages. 8.58x5.91x0.55 inches. In Stock.
Condition: As New. Unread book in perfect condition.
Condition: New.
Condition: New.
US$ 91.15
Quantity: 2 available
Add to basketPaperback. Condition: Brand New. 296 pages. 9.25x6.10x0.68 inches. In Stock.
Seller: Ria Christie Collections, Uxbridge, United Kingdom
US$ 108.47
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Add to basketCondition: New. In.
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
US$ 104.94
Quantity: Over 20 available
Add to basketCondition: As New. Unread book in perfect condition.
Language: English
Published by World Scientific Publishing Co Pte Ltd, SG, 1987
ISBN 10: 981023693X ISBN 13: 9789810236939
Seller: Rarewaves USA United, OSWEGO, IL, U.S.A.
Paperback. Condition: New. This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Seller: GreatBookPricesUK, Woodford Green, United Kingdom
US$ 108.46
Quantity: Over 20 available
Add to basketCondition: New.
Taschenbuch. Condition: Neu. Compound Semiconductor Device Modelling | Christopher M. Snowden (u. a.) | Taschenbuch | x | Englisch | 2011 | Springer | EAN 9781447120506 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.