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Simulation Semiconductor Devices Processes by Siegfried Selberherr (57 results)
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Condition: Brand New. New. US edition. Expediting shipping for all USA and Europe orders excluding PO Box. Excellent Customer Service.
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Simulation Of Semiconductor Processes And Devices 2007: SISPAD 2007
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ISBN 10: 8120090004 ISBN 13: 9788120090002
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Simulation of Semiconductor Devices and Processes: Vol.5
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Add to basketCondition: New. Brand New! Fast Delivery This is an International Edition and ship within 24-48 hours. Deliver by FedEx and Dhl, & Aramex, UPS, & USPS and we do accept APO and PO BOX Addresses. Order can be delivered worldwide within 7-12 days and we do have flat rate for up to 2LB. Extra shipping charges will be requested if the Book weight is more than 5 LB. This Item May be shipped from India, United states & United Kingdom. Depending on your location and availability.
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Condition: Très bon. Pour les expéditions internationales, nous consulter au préalable pour l ajustement des frais de port qui seront peut-être revus à la baisse/ For international shipments, please contact us in advance to adjust shipping costs. | Simulation of Semiconductor Devices and Processes: Volume 5 | Selberherr et alii | Springer-Verlag, 1993, in-8 cartonnage éditeur, 504 pages. Couverture propre. Dos solide. Intérieur frais. Exemplaire de bibliothèque : petit code barre en pied de 1re de couv., cotation au dos, rares et discrets petits tampons à l'intérieur de l'ouvrage. Bel état ! [BT14+].
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Add to basketPaperback. Condition: Brand New. 524 pages. 9.50x6.75x1.00 inches. In Stock.
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Simulation of Semiconductor Devices and Processes: Volume 5
Seller: Ria Christie Collections, Uxbridge, United Kingdom
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Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - The 'Fifth International Conference on Simulation of Semiconductor Devices and Processes' (SISDEP 93) continues a series of conferences which was initiated in 1984 by K. Board and D. R. J. Owen at the University College of Wales, Swansea, where it took place a second time in 1986. Its organization was succeeded by G. Baccarani and M. Rudan at the University of Bologna in 1988, and W. Fichtner and D. Aemmer at the Federal Institute of Technology in Zurich in 1991. This year the conference is held at the Technical University of Vienna, Austria, September 7 - 9, 1993. This conference shall provide an international forum for the presentation of out standing research and development results in the area of numerical process and de vice simulation. The miniaturization of today's semiconductor devices, the usage of new materials and advanced process steps in the development of new semiconduc tor technologies suggests the design of new computer programs. This trend towards more complex structures and increasingly sophisticated processes demands advanced simulators, such as fully three-dimensional tools for almost arbitrarily complicated geometries. With the increasing need for better models and improved understand ing of physical effects, the Conference on Simulation of Semiconductor Devices and Processes brings together the simulation community and the process- and device en gineers who need reliable numerical simulation tools for characterization, prediction, and development.
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Condition: Sehr gut. Zustand: Sehr gut | Seiten: 480 | Sprache: Englisch | Produktart: Bücher | The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
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Condition: Sehr gut. Zustand: Sehr gut | Seiten: 480 | Sprache: Englisch | Produktart: Bücher | The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presenta tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad spec trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites.
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Add to basketHardcover. Condition: Brand New. 1st edition. 504 pages. 9.60x6.60x1.10 inches. In Stock.
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US$ 137.35
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Add to basketCondition: New. The SISDEP 93 conference proceedings present outstanding research and development results in the area of numerical process and device simulation. The miniaturization of today s semiconductor devices, the usage of new materials and advanced process steps in .
