Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structures

Holt, D. B.

ISBN 10: 0521819342 / ISBN 13: 9780521819343

Published by Cambridge University Press, 2007

About this Item

Firm, square and tight with sharp corners and sturdy hinges, just showing a few minor rubs and some mild cosmetic wear. Hence a non-text page is stamped 'damaged'. Despite such this book is in nearly new condition. Thus the contents are crisp, fresh and clean. Offered for sale at a very sensible price.

Seller Inventory # 121239

Bibliographic Details

• Title: Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structures
• Publisher: Cambridge University Press
• Publication Date: 2007
• Language: English
• ISBN 10: 0521819342
• ISBN 13: 9780521819343
• Binding: Hardcover
• Edition: First Edition.
• Condition: Like New
• Weight: 45 ounces
• Seller catalogs:
  • Science, Mathematics & Technology

About this title

Synopsis

Covering topics that are especially important in electronic device development, this book surveys the properties, effects, roles and characterization of structurally extended defects in semiconductors. The basic properties of extended defects are outlined, and their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization are discussed. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

About the Authors

David Holt is an Emeritus Professor in the Department of Materials at Imperial College, London. He obtained his doctorate in Physical Metallurgy from the University of Birmingham, UK, in 1956, after which he held a number of academic positions over five years in the physics department at the University of the Witwatersrand, South Africa, before moving to the Department of Metallurgy at Imperial College, London. He has remained at Imperial College since then, except for a sabbatical year in the School of Physics at the University of New South Wales, Australia, and shorter periods at the Indian Institute of Technology, Kanpur, India. He has been a regular visitor at the Maspec Institute (now part of IMEM) in Parma, Italy. He researched the science and technology of semiconducting materials and devices and developed and applied techniques for their characterization in the scanning electron microscope. He is author or co-author of approximately 150 scientific publications and has co-authored or edited five previous books.

Ben Yacobi is an Adjunct Professor in the Department of Materials Science and Engineering at the University of Toronto. He received his doctorate in physics from the Hebrew University of Jerusalem in 1975. He held post-doctoral positions at Imperial College, London, and Harvard University, Massachusetts, and technical staff positions at the Solar Energy Research Institute and GTE Laboratories, US. He has worked in several areas of experimental solid-state physics, including the synthesis, applications and characterization of various electronic and photonic materials and devices. He is author or co-author of over ninety scientific publications and four previous books.