Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report July 1 to September 30, 1970 (Classic Reprint) - Softcover
Synopsis
Methods of Measurement for Semiconductor Materials, Process Control, and Devices: 1970 Quarterly Report
A practical overview of ongoing efforts to improve how we measure and specify semiconductor materials, processes, and devices. This quarterly report summarizes progress and methods that support consistency, reliability, and cost-effectiveness in government and industry standards.
The document highlights work on resistivity, carrier lifetime, and material inhomogeneities; specification of germanium for gamma-ray detectors; and the evaluation of metallization, die attachment, and wire bonds. It also covers measurements of thermal properties in devices, electrical tests of microwave components, and the characterization of silicon nuclear radiation detectors. A new focus introduces transit-time and related carrier-transport measurements in junction devices.- Resistivity, carrier lifetime, and inhomogeneity assessments in semiconductor crystals
- Evaluation of wire bonds, metallization adhesion, and die attachment techniques
- Thermal and electrical properties of semiconductor devices, plus microwave device measurements
- Silicon nuclear radiation detectors and emerging carrier-transport studies
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