Pavlov Andrei (53 results)
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Published by British Library, Historical Print Editions 6/23/2011, 2011
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Published by British Library, Historical Print Editions, 2011
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Published by British Library, Historical Print Editions, 2011
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Language: English
Published by Springer Nature (Sie), 2011
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N.A. Condition: New. ISBN:9788132202325.
Language: Ukrainian
Published by British Library, Historical Print Editions, 2011
- Softcover
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Published by British Library, Historical Print Editions, 2011
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Language: English
Published by Routledge, 2003
- Softcover
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Published by British Library, Historical Print Editions, 2011
- Softcover
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Published by Routledge, 2003
- Softcover
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Language: English
Published by Longman Group, 2003
- Softcover
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Condition: New. pp. 248.
Language: English
Published by Routledge 2003-08-27, 2003
- Softcover
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Language: English
Published by Longman Group, 2003
- Softcover
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Condition: New. pp. 248.
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Published by Taylor & Francis, 2003
- Softcover
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Language: English
Published by Longman Pub Group, 2003
- Softcover
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Paperback. Condition: Brand New. 1st edition. 248 pages. 8.25x5.25x0.50 inches. In Stock.
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Published by Routledge, 2003
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Published by Routledge, 2003
- Softcover
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Language: English
Published by Routledge, 2003
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Language: English
Published by Springer, 2010
- Softcover
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Published by Springer, 2008
- Hardcover
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Published by Springer, 2008
- Hardcover
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Language: English
Published by Springer, 2008
- Hardcover
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Language: English
Published by Springer, 2008
- Hardcover
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Language: English
Published by Springer, 2008
- Hardcover
Seller: Buchpark, Trebbin, GermanyBuchpark
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Condition: Sehr gut. Zustand: Sehr gut | Sprache: Englisch | Produktart: Bücher | As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cells with…parametric sensitivity. Growing sizes of SRAM arrays increase the likelihood of cells with marginal stability and pose strict constraints on transistor parameters distributions.Standard functional tests often fail to detect unstable SRAM cells. Undetected unstable cells deteriorate quality and reliability of the product as such cells may fail to retain the data and cause a system failure. Special design and test measures have to be taken to identify cells with marginal stability. However, it is not sufficient to identify the unstable cells. To ensure reliable system operation, unstable cells have to be repaired. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies.
Language: English
Published by Springer, 2008
- Hardcover
Seller: Buchpark, Trebbin, GermanyBuchpark
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Condition: Hervorragend. Zustand: Hervorragend | Sprache: Englisch | Produktart: Bücher | As technology scales into nano-meter region, design and test of Static Random Access Memories (SRAMs) becomes a highly complex task. Process disturbances and various defect mechanisms contribute to the increasing number of unstable SRAM cel…ls with parametric sensitivity. Growing sizes of SRAM arrays increase the likelihood of cells with marginal stability and pose strict constraints on transistor parameters distributions.Standard functional tests often fail to detect unstable SRAM cells. Undetected unstable cells deteriorate quality and reliability of the product as such cells may fail to retain the data and cause a system failure. Special design and test measures have to be taken to identify cells with marginal stability. However, it is not sufficient to identify the unstable cells. To ensure reliable system operation, unstable cells have to be repaired. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies covers a broad range of topics related to SRAM design and test. From SRAM operation basics through cell electrical and physical design to process-aware and economical approach to SRAM testing. The emphasis of the book is on challenges and solutions of stability testing as well as on development of understanding of the link between the process technology and SRAM circuit design in modern nano-scaled technologies.
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Language: English
Published by Routledge, 2016
- Hardcover
Seller: GreatBookPrices, Columbia, MD, U.S.A.GreatBookPrices
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Language: English
Published by Springer, 2010
- Softcover
Seller: preigu, Osnabrück, Germanypreigu
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Taschenbuch. Condition: Neu. CMOS SRAM Circuit Design and Parametric Test in Nano-Scaled Technologies | Process-Aware SRAM Design and Test | Andrei Pavlov (u. a.) | Taschenbuch | xvi | Englisch | 2010 | Springer | EAN 9789048178551 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, ju…ergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu.
Language: English
Published by Springer, 2010
- Softcover
Seller: Books Puddle, New York, NY, U.S.A.Books Puddle
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Condition: New. pp. 212.
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Language: English
Published by Routledge, 2016
- Hardcover
Seller: GreatBookPricesUK, Woodford Green, United KingdomGreatBookPricesUK
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Language: English
Published by Routledge, 2016
- Hardcover
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Language: English
Published by Routledge, 2016
- Hardcover
Seller: Majestic Books, Hounslow, United KingdomMajestic Books
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Condition: New. pp. 244.
