Language: English
Published by Cambridge, Cambridge, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Seller: Feldman's Books, Menlo Park, CA, U.S.A.
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Language: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
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Add to basketHardcover. Condition: Good. THERE ARE NO TARIFFS OR CUSTOMS DUTIES ON BOOKS. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. Previous owner's name to ffep, otherwise very good.
Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: Optimon Books, Gravesend, KENT, United Kingdom
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Add to basketPaperback. Condition: Fair. THERE ARE NO TARIFFS OR CUSTOMS DUTIES ON BOOKS. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
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Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
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Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
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Condition: As New. Unread book in perfect condition.
Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
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Language: English
Published by Cambridge University Press 2011-06-30, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
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Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
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Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
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First Edition
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Add to basketCondition: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, black & white illustrations. BIC Classification: TJFD5; TJFN. Category: (P) Professional & Vocational. Dimension: 245 x 171 x 21. Weight in Grams: 634. . 2011. 1st Edition. paperback. . . . .
Language: English
Published by Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
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Add to basketPaperback. Condition: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
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Language: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
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hardcover. Condition: New. In shrink wrap. Looks like an interesting title!
Language: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
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Language: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
Seller: GreatBookPrices, Columbia, MD, U.S.A.
Condition: As New. Unread book in perfect condition.
Language: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
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Language: English
Published by Cambridge University Press CUP, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
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Condition: New. pp. 380 Index.
Language: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
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Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: Kennys Bookstore, Olney, MD, U.S.A.
Condition: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, black & white illustrations. BIC Classification: TJFD5; TJFN. Category: (P) Professional & Vocational. Dimension: 245 x 171 x 21. Weight in Grams: 634. . 2011. 1st Edition. paperback. . . . . Books ship from the US and Ireland.
Language: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Seller: California Books, Miami, FL, U.S.A.
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Language: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
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Language: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
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Add to basketCondition: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated. hardcover. . . . .
Language: English
Published by Cambridge University Press, 2008
ISBN 10: 052188991X ISBN 13: 9780521889919
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Add to basketHardcover. Condition: Brand New. 1st edition. 266 pages. 9.75x7.00x0.50 inches. In Stock.
Language: English
Published by Cambridge University Press, GB, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: Rarewaves.com UK, London, United Kingdom
US$ 142.53
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Add to basketPaperback. Condition: New. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices.
Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: AHA-BUCH GmbH, Einbeck, Germany
Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This 2007 book was the first to be devoted to the compact modeling of RF power FETs.
Language: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Seller: Kennys Bookstore, Olney, MD, U.S.A.
Condition: New. This book was the first to be devoted to the compact modeling of RF power FETs. Series: The Cambridge RF and Microwave Engineering Series. Num Pages: 380 pages, 150 b/w illus. BIC Classification: TJFD5. Category: (P) Professional & Vocational. Dimension: 247 x 174 x 22. Weight in Grams: 800. . 2007. Illustrated. hardcover. . . . . Books ship from the US and Ireland.
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Add to basketHardcover. Condition: Brand New. 1st edition. 388 pages. 9.75x7.00x1.00 inches. In Stock.
Language: English
Published by Cambridge University Press, 2007
ISBN 10: 0521870666 ISBN 13: 9780521870665
Seller: AHA-BUCH GmbH, Einbeck, Germany
Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This is a book about the compact modeling of RF power FETs. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this is the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. All three authors work in the RF Division at Freescale Semiconductor, Inc., in Tempe Arizona. Peter H. Aaen is Modeling Group Manager, Jaime A. Plá is Design Organization Manager, and John Wood is Senior Technical Contributor responsible for RF CAD and Modeling, and a Fellow of the IEEE.
Language: English
Published by Cambridge University Press, Cambridge, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: Grand Eagle Retail, Bensenville, IL, U.S.A.
Paperback. Condition: new. Paperback. This book is a comprehensive exposition of FET modeling, and is a must-have resource for seasoned professionals and new graduates in the RF and microwave power amplifier design and modeling community. In it, you will find descriptions of characterization and measurement techniques, analysis methods, and the simulator implementation, model verification and validation procedures that are needed to produce a transistor model that can be used with confidence by the circuit designer. Written by semiconductor industry professionals with many years' device modeling experience in LDMOS and III-V technologies, this was the first book to address the modeling requirements specific to high-power RF transistors. A technology-independent approach is described, addressing thermal effects, scaling issues, nonlinear modeling, and in-package matching networks. These are illustrated using the current market-leading high-power RF technology, LDMOS, as well as with III-V power devices. This book was the first to be devoted to the compact modeling of RF power FETs. In it, you will find the techniques, verification and validation procedures required to produce a transistor model. The text also contains real-world examples. This item is printed on demand. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.
Language: English
Published by Cambridge University Press, 2011
ISBN 10: 0521336171 ISBN 13: 9780521336178
Seller: Revaluation Books, Exeter, United Kingdom
US$ 118.85
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Add to basketPaperback. Condition: Brand New. 1st edition. 378 pages. 9.50x6.70x0.90 inches. In Stock. This item is printed on demand.