Rokib Hasan (6 results)

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    • Language: English

      Published by LAP LAMBERT Academic Publishing, 2016

      3659920134 / 9783659920134

      • Softcover

      Seller: Revaluation Books, Exeter, United KingdomRevaluation Books

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      Condition: New

      US$ 75.52

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      Paperback. Condition: Brand New. 68 pages. 8.66x5.91x0.16 inches. In Stock.

    • Language: English

      Published by LAP LAMBERT Academic Publishing, 2016

      3659920134 / 9783659920134

      • Softcover

      Seller: Mispah books, Redhill, SURRE, United KingdomMispah books

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      Condition: New

      US$ 154.42

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      paperback. Condition: New. NEW. SHIPS FROM MULTIPLE LOCATIONS. book.

    • Language: English

      Published by LAP LAMBERT Academic Publishing Jul 2016, 2016

      3659920134 / 9783659920134

      • Softcover
      • Print on Demand

      Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.

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      Condition: New

      US$ 42.17

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      Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -GaN based double gate (DG) metal oxide semiconductor field effect transistors (MOSFETs) with a gate length of 10 nm have been designed for the next generation logic applications. The sub-threshold slope (SS) and drain induced barrie

    • Language: English

      Published by LAP LAMBERT Academic Publishing, 2016

      3659920134 / 9783659920134

      • Softcover
      • Print on Demand

      Seller: moluna, Greven, Germanymoluna

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      US$ 36.73

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      Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Hasan Md. RokibI am Md. Rokib Hasan. My home town is Mymensingh, Bangladesh. I have completed my B.Sc. in Electrical and Electronics Engineering from American International University- Bangladesh (AIUB)

    • Language: English

      Published by LAP LAMBERT Academic Publishing Jul 2016, 2016

      3659920134 / 9783659920134

      • Softcover
      • Print on Demand

      Seller: buchversandmimpf2000, Emtmannsberg, BAYE, Germanybuchversandmimpf2000

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      Taschenbuch. Condition: Neu. This item is printed on demand - Print on Demand Titel. Neuware -GaN based double gate (DG) metal oxide semiconductor field effect transistors (MOSFETs) with a gate length of 10 nm have been designed for the next generation logic applications. The sub-threshold slope (SS) and drain induced barrier lo

    • Language: English

      Published by LAP LAMBERT Academic Publishing, 2016

      3659920134 / 9783659920134

      • Softcover
      • Print on Demand

      Seller: preigu, Osnabrück, Germanypreigu

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      US$ 37.18

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      Taschenbuch. Condition: Neu. Effect of Underlap On Device Performance of GaN Based DG-MOSFET | Md. Rokib Hasan (u. a.) | Taschenbuch | 68 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659920134 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[d