Language: English
Published by Berlin/ Heidelberg, Springer Berlin., 2004
ISBN 10: 3540407189 ISBN 13: 9783540407188
Seller: Universitätsbuchhandlung Herta Hold GmbH, Berlin, Germany
2004. 16 x 24 cm. XIII, 291 S. XIII, 291 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. (Topics in Applied Physics). Sprache: Englisch.
hardcover. Condition: New. In shrink wrap. Looks like an interesting title!
hardcover. Condition: New. In shrink wrap. Looks like an interesting title!
Seller: Ria Christie Collections, Uxbridge, United Kingdom
US$ 360.68
Quantity: Over 20 available
Add to basketCondition: New. In.
Seller: Mispah books, Redhill, SURRE, United Kingdom
US$ 401.51
Quantity: 1 available
Add to basketHardcover. Condition: Like New. LIKE NEW. SHIPS FROM MULTIPLE LOCATIONS. book.
Language: English
Published by Springer Berlin Heidelberg, 2004
ISBN 10: 3540407189 ISBN 13: 9783540407188
Seller: moluna, Greven, Germany
US$ 407.13
Quantity: Over 20 available
Add to basketCondition: New. Presents the state of the art of ferroelectric RAM designApplication oriented reviews by leading expertsUp-to-date referencesThe book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods,.
Language: English
Published by Springer, Berlin, Springer Berlin Heidelberg, Springer, 2004
ISBN 10: 3540407189 ISBN 13: 9783540407188
Seller: AHA-BUCH GmbH, Einbeck, Germany
Buch. Condition: Neu. Neuware - In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on. This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introductory book on FeRAM for graduate students and newcomers to this field; it alsohelps specialists to understand FeRAMs more deeply.