Ferroelectric Ram (7 results)
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Seller: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermanyBuchWeltWeit Ludwig Meier e.K.
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Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Ferroelectric RAM is a random access memory similar in construction to DRAM but uses a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile memory…technologies that offer the same functionality as Flash memory. FeRAM advantages over Flash include: lower power usage, faster write performance and a much greater maximum number of write-erase cycles. FeRAM disadvantages are much lower storage densities than Flash devices, storage capacity limitations and higher cost. Development of FeRAM began in the late 1980s. Work was done in 1991 at NASA's Jet Propulsion Laboratory on improving methods of read out, including a novel method of non-destructive readout using pulses of UV radiation. Much of the current FeRAM technology was developed by Ramtron, a fabless semiconductor company. One major licensee is Fujitsu, who operate what is probably the largest semiconductor foundry production line with FeRAM capability. Since 1999 they have been using this line to produce standalone FeRAMs, as well as specialized chips with embedded FeRAMs within. Fujitsu produces devices for Ramtron Englisch.
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Seller: preigu, Osnabrück, Germanypreigu
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US$ 112.15
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Taschenbuch. Condition: Neu. Ferroelectric RAM | Ferroelectricity, Magnetoresistive Random Access Memory, NvSRAM, Phase-change memory, Programmable metallization cell, Racetrack memory, Flash memory, Lead zirconate titanate | Frederic P. Miller (u. a.) | Taschenbuch | Englisch | 2026 | OmniScriptum | EAN 9786130211349 | Verantwo…rtliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu Print on Demand.
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Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
US$ 112.15
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Taschenbuch. Condition: Neu. Ferroelectricity | Ferromagnetism, Polarization density, Ferroelectric capacitor, Ferroelectric RAM, Ferroelasticity, Paraelectricity, Piezoelectricity, Pyroelectricity, Antiferroelectricity, Flexoelectricity | Frederic P. Miller (u. a.) | Taschenbuch | Englisch | 2026 | OmniScriptum | EAN 9786130211…820 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu Print on Demand.
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Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
US$ 130.51
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Taschenbuch. Condition: Neu. Magnetic core memory | Random access, Computer memory, Ceramic, Magnetic field, Polarity (physics), Core dump, Delay line memory, Twistor memory, Bubble memory, Magnetoresistive Random Access Memory, Ferroelectric RAM | Frederic P. Miller (u. a.) | Taschenbuch | Englisch | 2026 | OmniScriptum | EAN 9…786130215651 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu Print on Demand.
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Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
US$ 148.86
US$ 80.74 shippingShips from Germany to U.S.A.Quantity: 5 available
Taschenbuch. Condition: Neu. Ramtron International | Colorado Springs, CO, Ferroelectric RAM | Lambert M. Surhone (u. a.) | Taschenbuch | Englisch | 2026 | OmniScriptum | EAN 9786133685918 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu… Print on Demand.
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Seller: AHA-BUCH GmbH, Einbeck, GermanyAHA-BUCH GmbH
Contact seller5-star sellerCondition: New
US$ 187.55
US$ 70.21 shippingShips from Germany to U.S.A.Quantity: 1 available
Taschenbuch. Condition: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering.
Published by OmniScriptum, 2026
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Seller: preigu, Osnabrück, Germanypreigu
Contact seller5-star sellerCondition: New
US$ 112.15
US$ 80.74 shippingShips from Germany to U.S.A.Quantity: 5 available
Taschenbuch. Condition: Neu. Data I/O | Antifuse, Ferroelectric RAM, Flash memory | Blossom Meghan Jessalyn | Taschenbuch | Englisch | 2026 | OmniScriptum | EAN 9786201604568 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu Print on Dema…nd.
