Long Term Reliability Nanometer Vlsi by Tan Sheldon (35 results)

XLI, 460 p. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch.

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Paperback. Condition: new. Paperback. This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Condition: New.

Hardcover. Condition: new. Hardcover. This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

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Condition: As New. Unread book in perfect condition.

Condition: As New. Unread book in perfect condition.

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Condition: New. pp. XLI, 460 211 illus., 195 illus. in color. 1 Edition NO-PA16APR2015-KAP.

Taschenbuch. Condition: Neu. Neuware -This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 504 pp. Englisch.

Buch. Condition: Neu. Neuware -This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 504 pp. Englisch.

Taschenbuch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.

Buch. Condition: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters.

Condition: New.

Condition: New.

Hardcover. Condition: Brand New. 504 pages. 9.25x6.10x1.26 inches. In Stock.

Condition: New.

Condition: New.

Paperback. Condition: new. Paperback. This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

Hardcover. Condition: new. Hardcover. This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters. Shipping may be from our Sydney, NSW warehouse or from our UK or US warehouse, depending on stock availability.

Taschenbuch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters. 504 pp. Englisch.

Buch. Condition: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book provides readers with a detailed reference regarding two of the most important long-term reliability and aging effects on nanometer integrated systems, electromigrations (EM) for interconnect and biased temperature instability (BTI) for CMOS devices. The authors discuss in detail recent developments in the modeling, analysis and optimization of the reliability effects from EM and BTI induced failures at the circuit, architecture and system levels of abstraction. Readers will benefit from a focus on topics such as recently developed, physics-based EM modeling, EM modeling for multi-segment wires, new EM-aware power grid analysis, and system level EM-induced reliability optimization and management techniques.Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models;Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying current flows, and the EM recovery effects. Also includes new, parameterized equivalent DC current based EM models to address the recovery and transient effects;Presents a cross-layer approach to transistor aging modeling, analysis and mitigation, spanning multiple abstraction levels;Equips readers for EM-induced dynamic reliability management and energy or lifetime optimization techniques, for many-core dark silicon microprocessors, embedded systems, lower power many-core processors and datacenters. 504 pp. Englisch.

Condition: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Reviews classic Electromigration (EM) models, as well as existing EM failure models and discusses the limitations of those models Introduces a dynamic EM model to address transient stress evolution, in which wires are stressed under time-varying .